aob11n60 600v,11a n-channel mosfet general description product summary v ds i d (at v gs =10v) 11a r ds(on) (at v gs =10v) < 0.7 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOB11N60L the aob11n60 has been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline p ower supply designs. 700v@150 g d s to-263 d 2 pak aob11n60 s g d symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc w/ o c junction and storage temperature range avalanche current c 5 single plused avalanche energy g mj v/ns derate above 25 o c 272 repetitive avalanche energy c 0.46 units c/w 65 0.5 aob11n60 c/w c/w parameter 2.2 v gate-source voltage t c =100c a pulsed drain current c continuous drain current t c =25c i d 11 8.0 -55 to 150 300 a mj v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage aob11n60 600 maximum case-to-sink a maximum junction-to-case 30 4.8 39 345 690 maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c c w g d s to-263 d 2 pak aob11n60 s g d rev 0: jan 2012 www.aosmd.com page 1 of 5
aob11n60 symbol min typ max units 600 700 bv dss / ? tj 0.67 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.6 0.7 w g fs 12 s v sd 0.73 1 v i s maximum body-diode continuous current 11 a i sm 39 a c iss 1320 1656 1990 pf c oss 100 146 195 pf c rss 6.5 11.2 16 pf r g 1.7 3.5 5.3 w q g 24 30.6 37 nc q gs 9.6 nc q gd 9.6 nc t d(on) 39 ns t r 58 ns t d(off) 92 ns i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10v, v ds =480v, i d =11a gate source charge static drain-source on-resistance v gs =10v, i d =5.5a maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =300v, i d =11a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 m a v ds =480v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =600v, v gs =0v bv dss id=250 a, vgs=0v m a v ds =0v, v gs =30v v drain-source breakdown voltage v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =5.5a forward transconductance diode forward voltage t d(off) 92 ns t f 42 ns t rr 400 500 600 ns q rr 4.7 5.9 7.1 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =11a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =11a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =4.8a, v dd =150v, r g =25 ? , starting t j =25 c rev0: jan 2012 www.aosmd.com page 2 of 5
aob11n60 typical electrical and thermal characteristics 0 4 8 12 16 20 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.4 0.6 0.8 1.0 1.2 1.4 0 4 8 12 16 20 24 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5.5a 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 4 8 12 16 20 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.4 0.6 0.8 1.0 1.2 1.4 0 4 8 12 16 20 24 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature rev0: jan 2012 www.aosmd.com page 3 of 5
aob11n60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =11a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aob11n60 (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 10: current de-rating (note b) 0 3 6 9 12 15 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =11a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aob11n60 (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 10: current de-rating (note b) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for aob11n60(note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.46 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse rev0: jan 2012 www.aosmd.com page 4 of 5
aob11n60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev0: jan 2012 www.aosmd.com page 5 of 5
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